PART |
Description |
Maker |
M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MPS1201S-01 |
Integrated Gate Bipolar Transistor
|
Mitsubishi Semiconductors
|
BCR08AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
BCR2PM-8 BCR2PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
CR05AS-4 CR05AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
CR8AM-12 CR8AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
BCR6AM-12 BCR6AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
BCR20KM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
BCR12CS-12 BCR12CS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
CT60AM-18F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
BCR5AS-12 BCR5AS-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
RM15TA-H RM15TA-M |
Rectifier Diodes, 800V Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|